Indium and tin layers were used as the diffusion barriers between the indium-tin oxide (ITO) and poly-Si in order to reduce the contact resistance. ITO/Si contacts should be adopted in thin-film transistor liquid crystal display (TFT LCD) for simplifying the fabrication process. For 5 ㎚ thick In and Sn layers, 10-minute annealing at 250℃ was performed to minimize the loss in the optical transmittance. With In and Sn layers, contact resistance values of 5×10^(-3) ∼ 4×10^(-3)Ω㎠ were obtained. These values were higher than those measured from the conventional ITO/Mo/Al/Si contacts (5×10^(-5) Ω㎠∼4 ×10^(-4)Ω㎠) but. lower than those obtained from ITO/Si contacts (about 1×10^(-1)Ω㎠) Sn was found to be stable after the annealing but In lost its function as a diffusion barrier by diffusion into Si.