본 연구는 낮은 파장의 원자외선 광원을 여 탄소나노튜브를 이용한 전자빔과 징크실리케이트 아노드를 이용하여 제작하였다. 자외선은 살균, 반도체, 디스플레이, 의료, 경화 등을 위하여 많은 산업에서 사용되며, 특히 원자외선은 살균에 많이 이용된다. 자외선 파장이 짧아 질수록 사람의 세포 손상 없이 바이러스의 감염성을 낮추는 데 효과적이다. 이에 낮은 파장의 원자외선 개발이 필요하며, 현재 사용하는 수은램프는 수은의 환경 문제로 자외선 발광다이오드의 상용화 연구가 활발히 이루어지고 있다. 하지만, 원자외선 발광다이오드는 효율과 출력이 낮다는 문제로 상용화에 애로가 있으므로, 이에 대한 해결책을로 탄소나 노튜브를 이용한 전자빔을 이용한 원자외선 제조 방법의 연구가 필요하다. 원자외선 제작을 위하여 실리콘 웨이퍼와 석영기판을 사용하였다. 반사형 타입으로 실리콘 웨이퍼를 사용하였고, 투과형 타입으로 석영을 사용하였다. 원자외선 물질로 징크실리케이트를 기판 위에 열처리 과정을 이용하여 제작하였다. 열처리의 최적화된 조건은 1,000도에서 질소를 주입하여 400 mTorr의 압력하에서 1시간 열처리 시키는 것이다. 결과로 실리콘 웨이퍼 위에 징크실리케이트가 있는 경우에는 247 nm의 원자외선, 그리고 석영기판 위에 징크실리케이트가 있는 경우에는 208, 226, 244nm의 파장의 원자외선이 발생됨을 확인하였다.
In this thesis, deep ultraviolet (deep-UV) light source was developed with carbon nanotube cold cathode electron beam (C-beam) and ZnxSiyOz synthesis with ZnO ink solution. UV is used in many industries such as semiconductor, display, automotive, food, medical, cleaning, curing and sterilizing. Optical cleaning of semiconductor substrates, disinfection by a virus and environmental harmful organs and sterilization of medical devices has been used deep-UV light source. The low wavelength of deep UV are effective for the loss of viral infectivity of virus without DNA damage. For the deep UV, mercury xenon lamp and deuterium lamp have been used in industries. However, due to the environmental issues of mercury, a mercury free light source has been demanded. UVC-LED has been studied as a mercury free UV light source, but it has low output power and power efficiency. The output power and power efficiency of deep UV with electron beams are better than UVC-LEDs. So, we developed high efficient and flat deep UV light generation technologies with C-beam as excitation source. To determine whether UV could be generated by C-beam, near UV anode was fabricated using the SrB4O7:Eu which is a general UV phosphor. The fabricated near UV with SrB4O7:Eu phosphor shows a wavelength of 363 nm and FWHM of 33 nm by irradiating the C-beam on the phosphor anode. Based on the generation of near UV using SrB4O7: Eu phosphor, we have studied deep UV generation using ZnO ink solution. We fabricated deep UV anode with two different substrate, such as Si wafer and quartz substrates for reflective and transparent mode operation. In an anode using a Si wafer substrate, deep UV with a wavelength of 247 nm and a FWHM of 23 nm was confirmed using SEM installed MonoCL3 system. In case of quartz substrate, we obtained three peak deep UV at 208, 226 and 244 nm wavelength by irradiating C-beam on the anode. To improve the intensity of the deep UV, the gas conditions and the pressure inside the furnace during the anode annealing process were changed. It was found that the deep UV intensity was improved by injecting G-N2 gas into the furnace and maintaining the pressure of 400 mTorr at 1,000 ℃ for 1 hour. X-ray diffraction (XRD) measured to figure out the deep UV anode material after annealing by injecting G-N2. It was found that Zn2SiO4 was produced after annealing. In the literature, the rhombohedral-Zn2SiO4 could emit radiation with a wavelength of 202, 226 and 234 nm, and those well overlap with our UV peaks.