Since discovered in 2004, graphene has become one of the hottest research topics during the following decade. Multiple methods are developed to produce graphene to explore a practical process. This dissertation addresses one of the methods, plasma enhanced chemical vapor deposition process, to synthesize graphene. A low temperature process is developed to fabricate graphene at 400 °C on copper substrate by PECVD. During the process, the effects of plasma power and flow rate of precursors are investigated, and the functions of main radicals are illustrated to understand the growth mechanism of graphene in PECVD. Then, the vertical graphene is directly grown on a glass substrate by PECVD, in which copper is firstly used as catalyst to enhance the growth vertical graphene. The growth rate of the vertical graphene is enhanced by a factor of 5.6 with the copper catalyst with denser vertical graphene. Highly conductive VG films having 800 Ω/□ are grown on glass substrates with Cu catalyst at the relatively low temperature. Furthermore, by controlling the plasma source power, growth time and temperature, a new type of morphology of vertical graphene, a ‘tree-like’ graphene which named as graphene forest, is grown on quartz substrate by PECVD process. Finally, a solid-state flexible supercapacitor with ultra-high flexibility and bending capacity is developed with graphene forest as electrode, which remains unaltered even after 100,000 times of bending or 180 degree folding. And a triboelectric nanogenerator with Voc of 20 V and Isc of 0.75 μA is also developed by using graphene forest as electrode.