Insight into Threshold Voltage and Drain Induced Barrier Lowering in Negative Capacitance Field Effect Transistor
- Resource Type
- Article
- Authors
- Bhaskar Awadhiya; Pravin N. Kondekar; Sameer Yadav; Pranshoo Upadhyay
- Source
- Transactions on Electrical and Electronic Materials, 22(3), pp.267-273 Jun, 2021
- Subject
- 전기공학
- Language
- English
- ISSN
- 2092-7592
1229-7607
In this paper, we have discussed threshold voltage and drain induced barrier lowering in NCFET. Threshold voltage in NCFET is lower as compared to MOSFET which is mainly because of negative equivalent oxide capacitance in NCFET. Further, we have discussed drain induced barrier lowering in NCFET and MOSFET. An increase in drain bias in MOSFET leads to decrease in threshold voltage and an increase in leakage current whereas in NCFET increase in drain bias leads to increase in threshold voltage and decrease in leakage current. We have obtained a positive value of DIBL factor for MOSFET and negative value for NCFET.