어닐링이 RF 스퍼터링으로 제작된 Ga2O3/Al2O3/SiC 소자에 미치는 영향 연구
Effect of Annealing on Ga2O3/Al2O3/SiC Devices Fabricated by RF Sputtering
- Resource Type
- Article
- Authors
- 이희재; 김민영; 문수영; 변동욱; 정승우; 구상모
- Source
- 반도체디스플레이기술학회지, 21(2), 79, pp.85-89 Jun, 2022
- Subject
- 전기공학
- Language
- 한국어
- ISSN
- 1738-2270
We reported on annealing effect on Ga2O3/Al2O3/SiC devices grown by radio frequency sputtering method. Post-deposition annealing at 900 °C was performed, which results in crystallization in the Ga2O3 films. The major peaks (-401) and (403) of Ga2O3 which was thermally treated at 900 °C appears in the x-ray diffraction (XRD) results. Auger electron spectroscopy (AES) shows that Ga and Al atoms seems to be diffused into the opposite direction Al2O3 and Ga2O3 after annealing. Transfer and output characteristics of back-gate transistor were analyzed where SiC substrate is used as gate material. On-state current and on/off ratio increased almost 109 and 106 times higher in the 900 °C annealed sample.