Silicon carbide is widely used in radiation environments due to its excellent properties. However, whenexposed to the strong radiation environment constantly, plenty of defects are generated, thus causing thematerial performance downgrades or failures. In this paper, the two-temperature model (2T-MD) is usedto explore the defect recovery process by applying the electronic energy loss (Se) on the pre-damagedsystem. The effects of defect concentration and the applied electronic energy loss on the defect recoveryprocess are investigated, respectively. The results demonstrate that almost no defect recovery takesplace until the defect density in the damage region or the local defect density is large enough, and theprobability of defect recovery increases with the defect concentration. Additionally, the results indicatethat the defect recovery induced by swift heavy ions is mainly connected with the homogeneousrecombination of the carbon defects, while the probability of heterogeneous recombination is mainlydependent on the silicon defects.