Source and Drain Formation by Using Plasma Doping and Laser Melt Annealing Technique for Deca-Nanometer SOI MOSFETs
- Resource Type
- Article
- Authors
- 성렬 맹; Kiju Im; Kyung-wan Park; Moon-gyu Jang; 이성재; Tae-woong Kang; Won-ju Cho
- Source
- Journal of the Korean Physical Society, 42(III), pp.666-670 Feb, 2003
- Subject
- 물리학
- Language
- English
- ISSN
- 1976-8524
0374-4884
The degradation of the carrier mobility in the channel region due to the high dopant scattering becomes a big issue in deca-nanometer MOSFET technology. Besides, the random locations of dopants cause serious threshold voltage variations in such small devices. Thus, fabrication of deca-nanometer size devices without channel doping is highly sought nowadays. In this paper we propose a novel fabrication method for ultra-thin SOI MOSFETs with plasma doping followed by excimer laser annealing as one of the promising candidates to achieve this goal.