4H-SiC中積層欠陥の電子線照射による拡大と熱処理による縮小 / Stacking Fault Expansion in 4H-SiC by Electron-beam Erradiation and Contraction by Thermal Annealing
- Resource Type
- Journal Article
- Source
- JSAP Annual Meetings Extended Abstracts. 2015, :3242
- Subject
15p-1A-11 4H-SiC IV族系化合物(SiC) Partial Dislocation Motion Stacking Fault 物性評価 積層欠陥 結晶工学 部分転位運動 - Language
- Japanese
- ISSN
- 2436-7613