Roll-to-Roll UV Imprint for Bottom-up Transistor Fabrication
- Resource Type
- Journal Article
- Authors
- M. Wijnen; N. Stroeks; P. Maury; R. Tacken; R. van der Werf
- Source
- Journal of Photopolymer Science and Technology. 2011, 24(1):43
- Subject
- R2R imprint
bottom-up transistor
nanoimprint
self-alignment
- Language
- English
- ISSN
- 0914-9244
1349-6336
We propose a design to fabricate transistors on flexible substrates in a bottom-up fashion using R2R UV-imprint lithography. The design consists of a template composed of multilevel as well as gray level features, the later used to facilitate device interconnection. A hard mold is fabricated by LBR and a flexible Ni replica is done using Ni electroplating. The flexible stamp is used in the R2R UV imprint machine with PET as flexible substrate. Imprints were performed at a speed of 0.35m/min and show a high level of replication of the multilevel as well as gray level features.