Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure
- Resource Type
- Journal Article
- Source
- JSAP Annual Meetings Extended Abstracts. 2012, :3264
- Subject
17p-E3-7 Field-effect Moblity GaN MOSFET 半導体B(探索的材料・物性・デバイス) 超高速・機能デバイス - Language
- English
- ISSN
- 2436-7613