Oxidation of Si Substrate during Al Evaporation / アルミニウム蒸着時のシリコン基板の酸化
- Resource Type
- Journal Article
- Authors
- Akira Kikuchi; Kensuke Nakata; Seiichi Iwata; 中田 健介; 岩田 誠一; 菊地 彰
- Source
- 日本金属学会誌 / Journal of the Japan Institute of Metals and Materials. 1986, 50(3):287
- Subject
- Schottky barrier diode
aluminum/silicon interface
electron spectroscopy for chemical analysis
evaporation
silicon oxide
- Language
- Japanese
- ISSN
- 0021-4876
1880-6880
This study was carried out to find out causes for the scatter in the value of the forward voltage of an Al/Si Schottky barrier diode. The Al/Si interface was studied by ESCA (Electron Spectroscopy for Chemical Analysis) after chemical removal of the Al evaporated on the Si. It was found that (1) the Si was oxidized in the early stages of Al evaporation, (2) this oxidation was caused by the Al which first arrived at the Si substrate and was oxidized, (3) the O/Al ratio of this oxidized Al was estimated to be greater than 3:2 (the ratio for Al2O3) with excess O available for oxidizing the Si and (4) this Si oxidation was more significant when the shutter in the evaporation chamber was unable to completely shut off the evaporation source from the substrate thus allowing the Al to be oxidized during this “slow evaporation” and when the substrate temperature was lower resulting in less Si oxide reduction by the Al.