Low-Temperature Growth of Oxide Superconducting Films by Plasma-Enhanced Chemical Vapor Deposition (CVD)
- Resource Type
- Journal Article
- Authors
- Keiichi Kanehori; Nobuyuki Sugii
- Source
- Journal of the Japan Society of Powder and Powder Metallurgy. 1991, 38(2):246
- Subject
- Language
- English
- ISSN
- 0532-8799
1880-9014
Plasma-enhanced CVD is one of the promising methods for low-temperature growth of oxide superconducting films which is required for the electronic applications. This review reports recent studies on low-temperature growth of oxide superconducting films by plasma-enhanced CVD. Y-Ba-Cu-O films can be grown at a temperature as low as 515°C by microwave plasma-enhanced CVD using β-diketonate organometallic complexes as metal sources. Bi-Sr-Ca-Cu-O films can be grown at around 610°C by rf plasma-enhanced CVD using metal halide sources. Optical emission spectroscopy in the growth chamber reveals that the CVD reaction mechanism can be changed by exciting organometallic complexes.