We fabricated non-doped titanium oxide films using plasma-assisted deposition to discuss their applications, varying the oxygen (O2) plasma concentrations diluted by argon gas and the substrate bias voltages (Vs). It is found that the resistivity reduced to the order of 10-4 Ωcm, although the transmittance showed about 60 % in visible wavelength, when the films were fabricated with 40%-O2 plasma irradiated and Vs at -40 V. We will discuss the properties of the films affected by the substrate bias.