On the Validation of Partial Wetting Model at Si Microstructured Surface / シリコンマイクロ構造面における部分濡れモデルの適用範囲について
- Resource Type
- Journal Article
- Authors
- Dejian ZHANG; Gyoko NAGAYAMA; Yankun YU; 于 艶坤; 張 徳建; 長山 暁子
- Source
- The Proceedings of the Thermal Engineering Conference. 2022, :214
- Subject
- Intermediate wetting state
Microstructured surface
Partial wetting model
Solid-liquid interface
- Language
- Japanese
- ISSN
- 2424-290X
The partial wetting at nano/microstructured surfaces can be described using the intermediate wetting state between the Cassie-Baxter and Wenzel state. However, the limitation of partial wetting model is still unclear. In this study, surface free energy analysis at the microstructured Si-water interface was performed from both theoretical and experimental aspects to verify the partial wetting model. The effective wetting area was estimated by electrochemical impedance spectroscopy method for the further analysis of the surface free energy experimentally. The partial wetting model was verified at the fabricated microstructured surfaces with its geometrical parameters smaller than 400 μm.