Remarkable charge-trapping performance based in Zr0.5Hf0.5O2 with nanocrystal Ba0.6Sr0.4TiO3 blocking layer for nonvolatile memory device
- Resource Type
- Short Communication
- Source
- In
Physics Letters A 14 October 2016 380(42):3509-3513 - Subject
Nanoscience - Language
- ISSN
- 0375-9601