GaAs 1−xN x on GaAs(0 0 1): Nitrogen incorporation kinetics from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine organometallic vapor-phase epitaxy
- Resource Type
- Article
- Source
- In
Journal of Crystal Growth 2008 310(6):1040-1048 - Subject
- Language
- ISSN
- 0022-0248