The Trade-off of Switching Losses and EMI Generation for SiC MOSFET with Common Source and Kelvin Source Configurations
- Resource Type
- Conference
- Authors
- Xue, Peng; Davari, Pooya
- Source
- 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) Power Electronics and Applications (EPE'23 ECCE Europe), 2023 25th European Conference on. :1-8 Sep, 2023
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Robotics and Control Systems
Transportation
MOSFET
Negative feedback
Silicon carbide
Statistical analysis
Kelvin
Electromagnetic interference
Switching loss
Silicon carbide (SiC)
SiC MOSFET
electromagnetic interference (EMI)
Kelvin source
- Language
In this paper, the characteristics of dI D /dt, dV DS /dt and oscillations for 3-pin and 4-pin MOSFETs using Kelvin source and common source configuration are experimentally identified. With theoretical analysis and spice simulation utilized, the common source inductance-induced negative feedback mechanism is investigated. A quantitative analysis is also performed to reveal the trade-off between switching losses and EMI generation between 3-pin and 4-pin MOSFETs.