Heteroepitaxial InP growth on a Si(001) substrate using a Ge buffer layer in MOCVD
- Resource Type
- Conference
- Authors
- Shin, Keun Wook; Lee, Sang-Moon; Lee, Kiyoung; Yoon, Euijoon
- Source
- 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2023 7th IEEE. :1-3 Mar, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Buffer layers
Optical buffering
Germanium
CMOS technology
Manufacturing
III-V semiconductor materials
MOCVD
Heteroepitaxy
InP and germanium
- Language
In this study, we grew InP heteroepitaxial layers on Si(001) substrates with Ge buffer layers. We found out that surface of InP layer was smoothened by adjusting Ge buffer layer. In addition, the suppression of planar defects in InP leaded to the improved crystallinity and optical properties, in spite of the increased threading dislocations. Our study suggested the possibility of combination of III-V and Ge for the future CMOS technologies.