Hot-Carrier Effect on TID Irradiated Short-Channel UTTB FD-SOI n-MOSFETs
- Resource Type
- Conference
- Authors
- Cui, Jiangwei; Zheng, Qiwen; Ning, Bingxu; Yu, Xuefeng; Zhao, Kai; Wei, Ying; Lu, Wu; He, Chengfa; Ren, Diyuan; Yu, Fang; Xu, Liewei; Guo, Qi
- Source
- 2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018 IEEE. :1-3 Jul, 2018
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Nuclear Engineering
Photonics and Electrooptics
Transistors
Stress
Radiation effects
Degradation
Human computer interaction
Silicon-on-insulator
Logic gates
- Language
- ISSN
- 2154-0535
The influence of total ionizing dose (TID) irradiation on hot-carrier effect of short channel ultra-thin body and buried oxide Fully Depleted Silicon On Insulator (UTBB FD-SOI) n-MOSFETs is investigated. Experimental results show larger parameters degradation for irradiated devices, which is due to irradiation generated defects in buried oxide (BOX).