Record RF Performance (ft=180GHz and fmax=240GHz) of a FDSOI NMOS processed within a Low Thermal Budget for 3D Sequential Integration
- Resource Type
- Conference
- Authors
- Frutuoso, T. Mota; Lugo, J.; Garros, X.; Brunet, L.; Casse, M.; Fenouillet-Beranger, C.; Romano, G.; Januel, T.; Cooper, D.; Loup, V.; Kanyandekwe, J.; Acosta-Alba, P.; Kerdiles, S.; Tavernier, A.; Brevard, L.; Ferrari, P.; Andrieu, F.; Gaillard, F.
- Source
- 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021
- Subject
- Bioengineering
Computing and Processing
Photonics and Electrooptics
Power, Energy and Industry Applications
Radio frequency
Performance evaluation
MOSFET
Three-dimensional displays
Silicon-on-insulator
Logic gates
Mathematical model
- Language
- ISSN
- 2158-9682
Record RF Figure-Of-Merits (FoM) is highlighted for a 42nm NMOS transistor fully processed at Low Thermal Budget (LTB) (