Wide Emission Wavelength InAs/InP Quantum Dots Grown by Double-Capped Procedure Using MOVPE Selective Area Growth
- Resource Type
- Periodical
- Authors
- Akaishi, M.; Okawa, T.; Saito, Y.; Shimomura, K.
- Source
- IEEE Journal of Selected Topics in Quantum Electronics IEEE J. Select. Topics Quantum Electron. Selected Topics in Quantum Electronics, IEEE Journal of. 14(4):1197-1203 Aug, 2008
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Indium phosphide
Quantum dots
Epitaxial growth
Epitaxial layers
Optical waveguides
Substrates
Optical devices
Photonic band gap
Gallium arsenide
Optical device fabrication
Double-cap procedure
InAs/InP
metal–organic vapor phase epitaxy (MOVPE)
quantum dots (QDs)
self-organized
selective area growth
- Language
- ISSN
- 1077-260X
1558-4542
A growth technique for wide emission wavelength quantum dots (QDs) via the Stranski–Krastanov (S–K) growth mode using a double-cap procedure and metal–organic vapor phase epitaxy (MOVPE) selective area growth is proposed. By using the double-cap procedure, we have improved the uniformity of the QDs height. Selective area growth by low-pressure MOVPE using a $\hbox{SiO}_{2}$ narrow stripe mask array pattern was carried for controlling and widening the emission wavelength range of the QDs in 16 stripe mask array waveguides. We have successfully demonstrated QD characteristics under various growth conditions, and have realized 120 nm emission wavelength range in 16 array, five layer InAs QD waveguides.