Embedding Langmuir-Blodgett Carbon Nanotube Array to Enhance Performance of Amorphous InGaZnO Thin Film Transistor
- Resource Type
- Conference
- Authors
- Zhang, Jiaona; Liao, Zhiqiang; Gao, Yubo; Zhang, Min
- Source
- 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) Nanotechnology (IEEE-NANO), 2018 IEEE 18th International Conference on. :1-5 Jul, 2018
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Thin film transistors
Sputtering
Carbon nanotubes
Hysteresis
Logic gates
Arrays
- Language
- ISSN
- 1944-9380
In this work, we have proposed and achieved a hybrid thin film transistor (TFT) by embedding single-walled carbon nanotube (SWNT) array into an amorphous indium gallium zinc oxide (a-IGZO) channel. The SWNT array has been integrated into the TFT channel by Langmuir-Blodgett method. The proposed hybrid channel has improved the carrier mobility of the TFT by four times and on/off current ratio by 20 times compared to that of the pure a-IGZO channel TFTs. In the hybrid channel, SWNT array works as the high-speed carrier transport path. Both the density and alignment of the SWNTs in the array are critical for controlling TFT performance.