30 GHz Ge/SiGe multiple quantum well photodiode
- Resource Type
- Conference
- Authors
- Chaisaku, P.; Marris-Morini, D.; Isella, G.; Chrastina, D.; Le Roux, X.; Edmond, S.; Cassan, E.; Coudevylle, J.-R.; Vivien, L.
- Source
- 8th IEEE International Conference on Group IV Photonics Group IV Photonics (GFP), 2011 8th IEEE International Conference on. :332-334 Sep, 2011
- Subject
- Photonics and Electrooptics
Photodiodes
Silicon germanium
High speed optical techniques
Optical device fabrication
Bandwidth
Quantum well devices
Fiber optics
Quantum-confined Stark effect
Ge/SiGe
multiple quantum wells
p-i-n diode
- Language
- ISSN
- 1949-2081
1949-209X
Surface-illuminated vertical p-i-n Ge/SiGe multiple quantum wells photodiodes are demonstrated with a low dark current density of 200 mA/cm2 and 10 GHz optical bandwidth at −1 V which reaches over 30 GHz at −7 V.