Effect of Built-in Stresses on Defects of Graphene Based Gas Sensors
- Resource Type
- Conference
- Authors
- Hu, Kai-Ming; Bai, Kun-Chao; Yan, Han; Peng, Bo; Zhang, Wen-Ming
- Source
- 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), 2019 20th International Conference on. :2388-2391 Jun, 2019
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Graphene
Stress
Gas detectors
Substrates
Strain
Sensor phenomena and characterization
Built-in stress
Raman increase phenomenon
defect density
modified phenomenological model
defect propagation
- Language
- ISSN
- 2167-0021
An interesting phenomenon, I D /I G intensity ratios between D mode and G mode increase around micro-wells, is observed in defective graphene sensors. A modified phenomenological model depicting the relation between I D /I G and the built-in stress is developed to reveal the physical mechanism of the above phenomenon. It is demonstrated that the initial defects in graphene gas sensors arising from fabrication processes can further propagate under the built-in tension resulting in increasing the defect density. The underlying mechanism is that the built-in stress provides the energy for the defect propagation of stretched graphene. The work could be helpful for applications of defective graphene-based devices.