Characterization of Radiation Tolerance of Bipolar Transistor with Al2O3 Dielectric at Different Dose Rates
- Resource Type
- Conference
- Authors
- Li, Xiaolong; Wang, Xin; Wang, Zhikuan; Zhu, Kunfeng; Shui, Guohua; Lin, Tao; Zheng, Qiwen; Yang, Yonghui; Li, Yudong; Lu, Wu; Guo, Qi
- Source
- 2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2022 22nd European Conference on. :1-3 Oct, 2022
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Nuclear Engineering
Photonics and Electrooptics
Robotics and Control Systems
Signal Processing and Analysis
Radiation effects
Bipolar transistors
Electron traps
Sensitivity
Gamma-rays
Dielectrics
Transistors
Bipolar transistor
radiation tolerance
Al2O3 dielectric
enhanced low dose rate sensitivity (ELDRS)
- Language
- ISSN
- 1609-0438
The radiation response of specially designed bipolar Darlington transistors with $Al_{2}O_{3}$-based dielectric after $^{60}$Co gamma-ray irradiation at various dose rates have been examined in this paper as a function of total dose. The base current sensitive to irradiation increases linearly with dose, dependent of the bias conditions and thickness of dielectric. According to the experimental results, it is shown that $Al_{2}O_{3}$ as a promising dielectric material may be achievable to resist the ionizing dose radiation for a bipolar transistor. Additionally, an enhanced effect occurring when the dose rate decreases is discussed with respect to interface traps buildup near the interfacial $SiO_{2}/Si$ structure. This suggests that reducing the thickness of the interfacial $SiO_{2}$ layer near the interface or increasing electron traps may be benefit to improve the enhanced low dose rate sensitivity (ELDRS) tolerance.