Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design
- Resource Type
- Conference
- Authors
- Zhang, Wogong; Oehme, Michael; Kostecki, Konrad; Matthies, Klaus; Stefani, Viktor; Kasper, Erich; Schulze, Joerg
- Source
- 2015 German Microwave Conference Microwave Conference (GeMiC), 2015 German. :135-138 Mar, 2015
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Signal Processing and Analysis
Coplanar waveguides
Semiconductor diodes
Silicon
Scattering parameters
Voltage measurement
Gain
Oscillators
IMPATT diode
VNA
S-parameter
CPW
SIMMWIC
E-band
amplifier
avalanche frequency
amplification frequency
- Language
- ISSN
- 2167-8022
A systematic characterization procedure of Silicon IMPATT (IMPact ionization Avalanche Transit-Time) diode is introduced in this work. DC characterization consists of currentvoltage (I-V) and capacity-voltage (C-V) measurements. RF small signal characterization is performed by the vector network analyzer (VNA). By combining the measured S-parameters of the 30×2 µm 2 IMPATT diode and simulated data of a short ended coplanar waveguide (CPW), an E-band amplifier design flow based on SIMMWIC (Silicon Monolithic mm-Wave Integrated Circuits) technology is as proof of concept presented. According to the simulation results, the maximum gain of the designed amplifier achieves 34.4 dB at 67.8 GHz with 30 mA biasing current. With different biasing currents (20 ∼ 40 mA) the avalanche frequency of the embedded IMPATT diode could be varied from 71.3 GHz to 91.5 GHz. This leads to an 8.6 GHz (62.8 ∼ 71.4 GHz) dynamic tuning range of the amplification frequency.