A monolithic integrated 85 GHz schottky rectenna with dynamic tuning range of the conversion voltage
- Resource Type
- Conference
- Authors
- Zhang, Wogong; Kasper, Erich; Oehme, Michael; Kaschel, Mathias; Stefani, Viktor; Schulze, Joerg
- Source
- 2014 IEEE International Symposium on Radio-Frequency Integration Technology Radio-Frequency Integration Technology (RFIT), 2014 IEEE International Symposium on. :1-3 Aug, 2014
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Signal Processing and Analysis
Rectennas
Schottky diodes
Radio frequency
Cutoff frequency
Frequency conversion
Voltage measurement
Silicon
Rectenna
85 GHz
SiMMWIC
Schottky diode
Cut-off frequency
Conversion voltage
- Language
In this paper, the latest research results for design and characterization of an 85 GHz fully monolithic integrated schottky rectenna (rectifying antenna) using SiMMWIC (Silicon Monolithic Mm-Wave Integrated Circuits) technology are presented. Under RF excitation in frequency range of 75 ~ 90 GHz a sharp receiving profile at 85 GHz of the designed rectenna is clearly characterized. With different bias currents (0.1 μA ~ 0.44 mA) the working point of the embedded schottky diode (cut-off frequency ~ 0.5 THz at 0 V) could be dynamically tuned for the optimal conversion voltage. The corresponding tuning range of the conversion voltage could be varied from 1 mV to 17 mV at 85 GHz.