Cryogenic operation of a high speed 850 nm VCSEL with 40.1 GHz modulation bandwidth at 223 K
- Resource Type
- Conference
- Authors
- Cheng, Hao-Tien; Wu, Cheng-Han; Fu, Wenning; Wang, Hsiao-Lun; Feng, Milton; Wu, Chao-Hsin
- Source
- 2020 Opto-Electronics and Communications Conference (OECC) Opto-Electronics and Communications Conference (OECC), 2020. :1-3 Oct, 2020
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
Vertical cavity surface emitting lasers
Bandwidth
Temperature
Junctions
Optical modulation
Optical device fabrication
High-speed optical techniques
VCSEL
cryogenics
optical data link
cryogenic VCSEL
junction temperature
- Language
- ISSN
- 2166-8892
Efficient and reliable interconnect could be achieved with cryogenic VCSELs. In this work, our home-made 850 nm VCSEL is characterized from 298 K to 223 K. At 223 K, our device exhibits an output power of 6 mW, and achieves a record -3dB bandwidth of 40.1 GHz. The higher laser output power and extended bandwidth of the VCSEL attributes to the reduced junction temperature of 62°C at 223 K.