Hot Carrier Reliability of Strained N-Mosfet with Lattice Mismatched Source/Drain Stressors
- Resource Type
- Conference
- Authors
- Ang, Kah-Wee; Wan, Chunlei; Chui, King-Jien; Tung, Chih-Hang; Balasubramanian, N.; Li, Ming-Fu; Samudra, Ganesh; Yeo, Yee-Chia
- Source
- 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Reliability physics symposium, 2007. proceedings. 45th annual. ieee international. :684-685 Apr, 2007
- Subject
- General Topics for Engineers
Hot carriers
MOSFET circuits
Lattices
Strain control
Scanning electron microscopy
Epitaxial growth
Voltage control
Reliability engineering
Degradation
Capacitive sensors
- Language
- ISSN
- 1541-7026
1938-1891
The hot carrier reliability of a novel uniaxial tensile strained n-channel transistor with silicon-carbon (Si1-yCy) source and drain (S/D) regions is investigated for the first time. Strained n-FETs show reduced hot carrier lifetime than the control n-FETs when stressed at comparable Isub/Id ratio. Worst case hot carrier stressing is observed to occur at maximum substrate current Isub condition which leads to a higher drive current IDsat degradation as compared to the VGS = VDS stress. At nominal operating voltages, the strained n-FET is projected to have a hot carrier lifetime well exceeding the 10-years requirement, showing no severe reliability issues.