Carrier Transport Characteristics of Sub-30 nm Strained N-Channel FinFETs Featuring Silicon-Carbon Source/Drain Regions and Methods for Further Performance Enhancement
- Resource Type
- Conference
- Authors
- Liow, Tsung-Yang; Tan, Kian-Ming; Chin, Hock-Chun; Lee, Rinus T. P.; Tung, Chih-Hang; Samudra, Ganesh S.; Balasubramanian, N.; Yeo, Yee-Chia
- Source
- 2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
FinFETs
Capacitive sensors
Silicon carbide
Implants
Fabrication
Lattices
Backscatter
Etching
Microelectronics
Optimization
- Language
- ISSN
- 0163-1918
2156-017X
We report performance optimization techniques for FinFETs with Si0.99C0.01 source and drain (S/D) regions and sub-30 nm gate lengths. By scaling up the Si0.99C0.01 stressor thickness, a ~9% IDsat enhancement can be obtained. A further 16% IDsat enhancement can be achieved with the adoption of slim spacers. Carrier backscattering study was performed to clarify the carrier transport characteristics such as ballistic efficiency and carrier source injection, showing consistency with observed IDsat enhancement.