Imaging polarization in GaN surfaces by laser terahertz emission microscopy
- Resource Type
- Conference
- Authors
- Sakai, Yuji; Kawayama, Iwao; Nakanishi, Hidetoshi; Tonouchi, Masayoshi
- Source
- 2017 Conference on Lasers and Electro-Optics (CLEO) Lasers and Electro-Optics (CLEO), 2017 Conference on. :1-2 May, 2017
- Subject
- Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Gallium nitride
Surface emitting lasers
Optical surface waves
Luminescence
Electric fields
Surface waves
Laser excitation
- Language
Polarizations in GaN surfaces are visualized using laser terahertz emission microscopy (LTEM). A non-radiative-inversion domain that is hardly distinguishable with photoluminescence imaging was observed with this method. The present study demonstrates that LTEM provides rich information about the surface polar states in GaN, which is crucial to improve the performance of GaN-based optoelectronic and power devices.