Effect of Surface Microstructure on Joints Using Nanoporous Cu Sheet for Power Devices
- Resource Type
- Conference
- Authors
- Nishikawa, Hiroshi; Park, Byungho; Saito, Mikiko; Mizuno, Jun
- Source
- 2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC) Microelectronics and Packaging Conference & Exhibition (EMPC), 2023 24th European. :1-4 Sep, 2023
- Subject
- Aerospace
Bioengineering
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Power, Energy and Industry Applications
Transportation
Solvents
Silicon carbide
Surface morphology
Nanoscale devices
Bonding
Soldering
Surface treatment
Solid-state bonding
nanoporous Cu
dealloying
power module
shear strength
- Language
Wide-bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are being developed as promising replacements for Si-based semiconductors. The operating temperature of SiC semiconductor is expected to be much higher. The replacement of soldering with new bonding process has been needed for WBG semiconductor devices. We have proposed a solid-state bonding process using nanoporous metal sheet, as a die-attach bonding method for WBG semiconductor devices. In this study, the bonding process using nanoporous Cu sheet as an insert metal was investigated to achieve a Cu disk/Cu disk bonding without solvent and flux. The shear strength of the joint using nanoporous Cu sheet at 350 and 300°C in formic acid atmosphere exceeded the shear strength of conventional Pb-5Sn solder joints which was approximately 18 MPa.