A New Method to Determine Effective Lateral Doping Abruptness and Spreading-Resistance Components in Nanoscale MOSFETs
- Resource Type
- Periodical
- Authors
- Kim, S.-D.; Narasimha, S.; Rim, K.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 55(4):1035-1041 Apr, 2008
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Doping
Resistance
Semiconductor process modeling
Junctions
Doping profiles
MOSFETs
Capacitance
Lateral doping abruptness
on-resistance
overlap capacitance
series resistance
spreading resistance
- Language
- ISSN
- 0018-9383
1557-9646
A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The spreading-resistance components under EXT-to-gate overlap, and spacer regions are successfully correlated to the lateral EXT doping abruptness by the relationship between on-resistance $(R_{\rm on})$ and overlap capacitance response $(C_{\rm ov})$ measured from 90-nm-node silicon-on-insulator MOSFETs. The accurate determination of lateral doping abruptness is found to be essential for linking the external spreading resistance to intrinsic short-channel device characteristics.