12.5 Gbit/s data rate fiber transmission using single-mode selectively oxidized GaAs VCSELs at /spl lambda/=850 nm
- Resource Type
- Conference
- Authors
- Mederer, F.; Jung, C.; Jager, R.; Kicherer, M.; Michalzik, R.; Schnitzer, P.; Wiedenmann, D.; Ebeling, K.J.
- Source
- 1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009) LEOS'99 LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting. 2:697-698 vol.2 1999
- Subject
- Photonics and Electrooptics
Components, Circuits, Devices and Systems
Gallium arsenide
Vertical cavity surface emitting lasers
Optical modulation
Bandwidth
Indium gallium arsenide
Bit error rate
Optical fiber LAN
Power generation
Optical sensors
Oxidation
- Language
- ISSN
- 1092-8081
We report 12.5 Gbit/s data transmission over 100 m multimode fiber (MMF) and 1 km single-mode fiber (SMF) using single-mode selectively oxidized GaAs VCSELs emitting at 850 nm. In both cases the bit-error rate (BER) remains better than 10/sup -11/ for pseudo-random bit sequence (PRBS) transmission. The obtained results clearly indicate that GaAs VCSELs are attractive transmitters for high speed fiber optic interconnects. A schematic of the selectively oxidized top emitting GaAs VCSEL is shown-the one-wavelength thick inner cavity contains three active GaAs-Al/sub 0.2/Ga/sub 0.8/As quantum wells.