A thermally-stable sub-0.9nm EOT TaSix/HfSiON gate stack with high electron mobility, suitable for gate-first fabrciation of hp45 LOP devices
- Resource Type
- Conference
- Authors
- Inumiya, S.; Akasaka, Y.; Matsuki, T.; Ootsuka, F.; Torii, K.; Nara, Y.
- Source
- IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :23-26 2005
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Electron mobility
Annealing
Plasma temperature
Semiconductor films
Nitrogen
Atomic layer deposition
Dielectrics
Hafnium oxide
Plasma properties
Presence network agents
- Language
- ISSN
- 0163-1918
2156-017X
We have realized a 0.9nm-EOT TaSix/HfSiON gate stack that exhibits the high electron mobility of 264 cm 2 /Vs @ 0.8MV/cm (86% of thermal SiO 2 ), even after spike annealing at 1000degC. This was achieved by using thermally-stable HfSiON gate dielectrics with plasma nitridation, in which interfacial layer growth due to recoiled oxygen had been successfully suppressed