Charge storage in Si-nanocrystals embedded NOS structure characterized by Kelvin probe force microscopy
- Resource Type
- Conference
- Authors
- Xu, Jie; Lin, Zewen; Dameng Tan; Li, Wei; Xu, Jun
- Source
- 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2016 13th IEEE International Conference on. :1104-1106 Oct, 2016
- Subject
- Components, Circuits, Devices and Systems
Charge carrier processes
Silicon
Electric potential
Substrates
Surface charging
Surface topography
Annealing
- Language
Si-nanocrystals (Si-NCs) embedded nitride-oxide-semiconductor (NOS) structure is fabricated by plasma enhanced chemical vapor deposition (PECVD) and post annealing technique. Charging effect in the floating gate structure is then characterized by Kelvin probe force microscopy (KPFM) at the nanoscale. The stored charge density is calculated by an electrostatic analysis, which is on the magnitude of 1011 e/cm2. Different charging densities and retention time of electrons and holes have been observed, which is tentatively ascribed to the asymmetric energy band offset of Si-NCs and Si nitride matrix.