Electron beam characterization of double gate field emitter arrays fabricated by a focused ion beam assisted process
- Resource Type
- Conference
- Authors
- Helfenstein, Patrick; Jefimovs, Konstantins; Kirk, Eugenie; Escher, Conrad; Fink, Hans-Werner; Tsujino, Soichiro
- Source
- 25th International Vacuum Nanoelectronics Conference Vacuum Nanoelectronics Conference (IVNC), 2012 25th International. :1-2 Jul, 2012
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Logic gates
Field emitter arrays
Laser beams
Apertures
Plasmas
Electron beams
double-gate
electron beam collimation
field emtter array
field emission
- Language
- ISSN
- 2164-2370
2380-6311
We have recently presented double-gate field emitter arrays exhibiting an improved electron beam in terms of collimation angle and current density [1]. Here we report a detailed analysis of the beam collimation properties of our devices and an up-scaling of the array size by a factor of one hundred.