Can single electron effects be directly observed in Si quantum dots array at room temperature?
- Resource Type
- Conference
- Authors
- Yu, L.W.; Chen, K.J.; Wu, L.C.; Dai, M.; Li, W.; Huang, X.F.
- Source
- Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. Solid-state and integrated circuits technology Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on. 1:654-657 vol.1 2004
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Electrons
Quantum dots
US Department of Transportation
Plasma temperature
Plasma chemistry
Oxidation
Potential well
Tunneling
Atomic force microscopy
Plasma confinement
- Language
We report a direct observation of Coulomb blockade and quantum confinement effects in the room-temperature current-voltage (I-V) characteristics of Si quantum dots (Si-QDs) array (with a mean diameter of 6 nm), which is embedded in the SiO/sub 2//Si-QDs array/SiO/sub 2//n/sup +/-Si (100) structure and elaborated in a plasma enhanced chemical vapor deposition (PECVD) system by layer-by-layer technique and in situ plasma oxidation. The I-V curve exhibits a "sharp-edged bulge-like" peak structure, which differs remarkably from the peaks and the staircases reported for the case of single QD. Moreover, quantum conductance phenomenon in the I-V characteristics has been found at the onsets of the peaks in the I-V characteristics.