MOS varactors with ferroelectric films
- Resource Type
- Conference
- Authors
- Gevorgian, S.; Abadei, S.; Berg, H.; Jacobsson, H.
- Source
- 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Microwave symposium Microwave Symposium Digest, 2001 IEEE MTT-S International. 2:1195-1198 vol.2 2001
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Aerospace
Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
Varactors
Ferroelectric films
Q factor
CMOS process
Capacitance-voltage characteristics
Tuning
Voltage
Frequency
Semiconductor films
Conductivity
- Language
- ISSN
- 0149-645X
The microwave performance of MOS varactors with additional ferroelectric film (MFOS) is presented. The tunability of MFOS varactors above 20 GHz is more than 10% higher than that of simple MOS varactors, with sufficiently high Q factor. The proposed MFOS varactor has a simple design and is compatible with standard CMOS processes. It may have symmetric C-V curves at rather high tuning voltages and superior performance at millimetre wave frequencies. In experiments varactors are based on NaNbO/sub 3/ films grown on high resistivity silicon substrates.