The impact of driving capacity on single-event effect vulnerability of standard cell
- Resource Type
- Conference
- Authors
- Wang, Dinghong; Ding, Lili; Chen, Wei; TanWang; Xu, Jingyan; Luo, Yinhong
- Source
- 2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Radiation Effects of Electronic Devices (ICREED), 2021 4th International Conference on. :1-6 May, 2021
- Subject
- Components, Circuits, Devices and Systems
Nuclear Engineering
Radiation effects
Logic gates
Transient analysis
Standards
Flip-flops
driving capacity
standard cell
single-event effect
- Language
The impacts of driving capacity on single-event effect vulnerability of 40 nm standard cells were studied. The result shows that cells with high driving capacity are inclined to have stronger single-event effect tolerance. AND gate has smaller SET cross section and transient pulse width than OR gate and D flip-flop.