Experimental Study on SOI LIGBT with Field Plate Resistances at Anode Side
- Resource Type
- Conference
- Authors
- Wei, Jie; Zhu, Pengchen; Wei, Yuxi; Yang, Kemeng; Li, Jie; Wang, Junnan; Dai, Kaiwei; Song, Hua; Zhang, Sen; Zhang, Wentong; Zhang, Bo; Luo, Xiaorong
- Source
- 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :406-409 May, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Resistance
Integrated circuits
Voltage
Logic gates
Turning
Feature extraction
Power semiconductor devices
SOI LIGBT
field plate resistance
snapback effect
turnoff loss
on-state voltage drops
- Language
- ISSN
- 1946-0201
A novel snapback-free SOI LIGBT with Field Plate Resistances (FPR) is proposed and experimentally investigated. The FPR consisting of multiple polysilicon resistances is located above the field oxide at the anode side, which is compatible with the planar poly gate design. The two sides of FPR are connected with the P+ anode and N+ anode, respectively. The FPR not only effectively increases the anode distributed resistance to eliminate the snapback effect in the on-state, but also provides an electron extraction path during the turnoff period to accelerate the turning off and decrease the turnoff loss ($E_{\text{off}}$). A 439V FPR SOI LIGBT is fabricated and decreases the $E_{\text{off}}$ by 36% at the expense of 7% increasement in on-state voltage drop ($V_{\text{on}}$) compared with the conventional SOI LIGBT. The experimental results show that the proposed FPR SOI LIGBT could achieve a good tradeoff relationship between the $E_{\text{off}}$ and $V_{\text{on}}$.