Low resistance TiO2-passivated calcium contacts to for crystalline silicon solar cells
- Resource Type
- Conference
- Authors
- Allen, Thomas G.; Zheng, Peiting; Vaughan, Ben; Barr, Matthew; Wan, Yimao; Samundsett, Christian; Bullock, James; Cuevas, Andres
- Source
- 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2016 IEEE 43rd. :0230-0233 Jun, 2016
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Silicon
Calcium
Conductivity
Photovoltaic cells
Surface treatment
Ohmic contacts
- Language
It has recently been shown that low resistance Ohmic contact to lightly doped n-type crystalline silicon (c-Si) is possible by direct metallization via a thin layer of the low work function metal calcium (φ ∼2.9 eV) and an overlying aluminium capping layer. Using this approach upper limit contact resistivities of < 2 mΩcm 2 can be realised on undiffused n-type surfaces. However, recombination at the Ca / Si interface limits the application of the Ca contact to very low contact fractions which leads to non-negligible resistive losses and an increase in device fabrication complexity. Here we show that the low resistance Ohmic contact of the Ca / Al structure is retained after the addition of a TiO2 interlayer, leading the way to the development of a passivated contact device utilizing TiO 2 and Ca.