A Non-Reflective T/R Switch with Leakage Cancellation Technique for 5G mm Wave Application
- Resource Type
- Conference
- Authors
- Wang, Yi-Tong; Wu, Lin-Sheng; Qiu, Liang-Feng; Shi, Li-Yun; Mao, Jun-Fa
- Source
- 2020 15th European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference (EuMIC), 2020 15th European. :113-116 Jan, 2021
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Resistors
5G mobile communication
Gallium arsenide
Switches
Insertion loss
Wideband
Switching circuits
GaAs switch
leakage cancellation
non-reflective switch
single-pole double-throw (SPDT) switch
- Language
In this paper, a transmitter/receiver (T/R) single-pole double-throw (SPDT) switch is designed with a new leakage cancellation topology for high T/R isolation within 24.25~29.5 GHz and fabricated with the 0.15 µm GaAs pHEMT technology. The proposed leakage cancellation structure consists of two pHMETs and a series 50Ω resistor sandwiched by two 90° phase shifters. It provides wideband isolation and non-reflective characteristic at the isolated port. The measured insertion loss is smaller than 1.37 dB and the isolation is higher than 26.7 dB, within the whole 24.25~29.5 GHz band for 5G millimeter-wave application. The minimum insertion loss and the maximum T/R isolation are achieved as 1.07 dB and 47 dB respectively both at 24.3 GHz. The chip core occupies the area of 0.45x0.56 mm 2 .