Analysis and Control of Deep-Level Defects in Dilute Nitride Semiconductor GaInNAsSb
- Resource Type
- Conference
- Authors
- He, Yilun; Miyashita, Naoya; Okada, Yoshitaka
- Source
- 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Photovoltaic Energy Conversion (WCPEC), 2018 IEEE 7th World Conference on. :0896-0900 Jun, 2018
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Annealing
Admittance
Photovoltaic cells
Spectroscopy
Frequency modulation
Nitrogen
annealing
III-V semiconductor materials
- Language
Deep-level defects in as-grown and annealed dilute nitride semiconductor GaInNAsSb solar cells grown by molecular beam epitaxy were investigated by admittance spectroscopy measurement and compared to determine the mechanism of post-annealing effects on improving the collection of photo carriers. The annealing was confirmed to be effective to decrease nitrogen-related defects in the as-grown GaInNAsSb sample as well as the background carrier concentration. This effect is considered to be mainly responsible for the improved collection of photo carriers. In addition, we found an optimal annealing temperature that suppresses the formation of new defects, leading to a remarkable improvement of the photo carrier collection.