Growth of InGaAs:Nδ-doped superlattices for multi-junction solar cells
- Resource Type
- Conference
- Authors
- Umeda, Shumpei; Yagi, Shuhei; Miyashita, Naoya; Okada, Yoshitaka; Yaguchi, Hiroyuki
- Source
- 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Photovoltaic Energy Conversion (WCPEC), 2018 IEEE 7th World Conference on. :1861-1864 Jun, 2018
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Photovoltaic cells
Photonic band gap
Temperature measurement
Doping
Superlattices
Rough surfaces
Surface roughness
dilute nitrides
δ-doping technique
molecular beam epitaxy
multi-junction solar cells
- Language
InGaAs:Nδ-doped superlattices (SLs) with a band gap of 1 eV were fabricated by molecular beam epitaxy as a candidate for the subcell material of 4-junction lattice-matched tandem solar cells. The N δ-doping was carried out by suppling N source during the growth interruption and the SL structures were obtained by alternate formation of a N δ-doped layer and an In 0.06 Ga 0.94 As spacer layer. It was revealed that excess N supply induces interstitial N incorporation and surface roughness. By adjusting the growth conditions and SL structural parameters, coherent growth of SLs with the band gap of 1 eV was successfully achieved.