D-band Transceiver Utilizing 70-nm GaAs-mHEMT Technology for FDD System
- Resource Type
- Conference
- Authors
- Ito, Masaharu; Okawa, Takashi; Marumoto, Tsunehisa
- Source
- 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019 IEEE. :1-4 Nov, 2019
- Subject
- Components, Circuits, Devices and Systems
Photonics and Electrooptics
D-band
wireless communication
mHEMT
silica substrate
- Language
This paper presents a D-band transceiver utilizing a 70-nm GaAs metamorphic high electron mobility transistor (mHEMT) technology for a frequency division duplex (FDD) system. The transceiver includes a duplexer, transmitter and receiver modules, an LO and IF circuit board, and a real-time modem. Each module comprises a silica-based package on which D-band converter and E-band multiplier monolithic microwave integrated circuits (MMICs) are mounted using a flip-chip bonding technique. Real-time communication tests are performed at 142- and 157-GHz duplex frequencies. A 10-Gbps transmission with a high spectral efficiency are achieved using a 128 quadrature amplitude modulation (QAM) signal.