Surface Photovoltage Measurement of Perovskite Solar Cells to Screen Carrier Selective Contacts
- Resource Type
- Conference
- Authors
- Kavadiya, Shalinee; Onno, Arthur; Boyd, Caleb; Yu, Zhengshan; McGehee, Michael; Holman, Zachary C.
- Source
- 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2020 47th IEEE. :1439-1440 Jun, 2020
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Semiconductor device measurement
Photovoltaic cells
Bending
Silicon
Charge carrier processes
Probes
Kelvin
Surface photovoltage
Kelvin probe method
perovskite solar cells
carrier selective contacts
silicon solar cells
- Language
SPV measurement through the Kelvin probe method is described. Silicon heterojunction structures show the maximum SPV of 700 V. Measurement on perovskite structures, and the results suggest adding BCP with C60 enhances the selectivity of C60 electron contact. Furthermore, PTAA and PTAA/PFN have similar selectivity but NiO x is poorly selective. SPV is an easy way to provide a relative comparison between various cell structures and contact layers to determine the relative extractable $V_{oc}$ and properties of the contact layer (selectivity, passivation) limiting the efficiency.