Highly Manufacturable, Cost-Effective, and Monolithically Stackable 4F2 Single-Gated IGZO Vertical Channel Transistor (VCT) for sub-10nm DRAM
- Resource Type
- Conference
- Source
- 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
- Subject
Bioengineering Communication, Networking and Broadcast Technologies Components, Circuits, Devices and Systems Computing and Processing Engineered Materials, Dielectrics and Plasmas Fields, Waves and Electromagnetics Nuclear Engineering Photonics and Electrooptics Power, Energy and Industry Applications Robotics and Control Systems Signal Processing and Analysis Wafer bonding Power demand Random access memory Logic gates Ions Transistors Leakage currents - Language
- ISSN
- 2156-017X