A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs
- Resource Type
- Conference
- Authors
- Lyu, Gang; Wei, Jin; Song, Wenjie; Zheng, Zheyang; Zhang, Li; Zhang, Jie; Cheng, Yan; Feng, Sirui; Ng, Yat Hon; Chen, Tao; Zhong, Kailun; Liu, Jiapeng; Zeng, Rong; Chen, Kevin J.
- Source
- 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :5.2.1-5.2.4 Dec, 2021
- Subject
- Components, Circuits, Devices and Systems
Crosstalk
Monolithic integrated circuits
Voltage
HEMTs
Logic gates
Silicon
MODFETs
- Language
- ISSN
- 2156-017X
A novel GaN power IC platform on engineered bulk Si (EBUS) substrate is demonstrated for monolithic integration of 200-V high-side and low-side p-GaN HEMTs of a half-bridge circuit. The engineered substrate features a P+-N-doping profile realized by P-type implantation into an N-type (111) Si wafer. The P+ Si layer is then split into P+ islands using deep trenches and are effectively isolated through back-to-back PN junctions. The P+ island provides a local electrical substrate for the overlaying GaN HEMT, while all GaN HEMTs share the same bulk Si wafer; such configuration enables monolithic GaN power integration with eliminated crosstalk associated with conventional bulk Si that serves as a common electrical substrate.