A 68–83 GHz power amplifier in 90 nm CMOS
- Resource Type
- Conference
- Authors
- Lee, Jeffrey; Chen, Chung-Chun; Tsai, Jen-Han; Lin, Kun-You; Wang, Huei
- Source
- 2009 IEEE MTT-S International Microwave Symposium Digest Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International. :437-440 Jun, 2009
- Subject
- Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Communication, Networking and Broadcast Technologies
Power amplifiers
CMOS technology
Wideband
Power generation
Couplers
Millimeter wave technology
Topology
Radio frequency
Circuits
Radiofrequency amplifiers
CMOS
power amplifier (PA)
millimeter-wave (MMW)
MMIC
- Language
- ISSN
- 0149-645X
A balanced PA covering 68–83 GHz is developed in 90nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz. The PA has a maximum saturation output power of 14dBm at 70 GHz, and greater than 11.8 dBm from 68 to 83 GHz. The best P 1dB is 12 dBm at 68 GHz, and greater than 8.3 dBm from 68 to 83 GHz.